Infineon Technologies - BSC016N06NSTATMA1

KEY Part #: K6416415

BSC016N06NSTATMA1 Verðlagning (USD) [62328stk lager]

  • 1 pcs$0.62733

Hlutanúmer:
BSC016N06NSTATMA1
Framleiðandi:
Infineon Technologies
Nákvæm lýsing:
DIFFERENTIATED MOSFETS.
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - RF, Transistors - Forritanleg sameining, Transistors - IGBTs - mát, Transistors - FETs, MOSFETs - Single, Thyristors - SCR, Transistors - FETs, MOSFETs - Arrays, Thyristors - DIACs, SIDACs and Thyristors - TRIACs ...
Samkeppnisforskot:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSC016N06NSTATMA1 Vörueiginleikar

Hlutanúmer : BSC016N06NSTATMA1
Framleiðandi : Infineon Technologies
Lýsing : DIFFERENTIATED MOSFETS
Röð : OptiMOS™
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 60V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 31A (Ta), 100A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 1.6 mOhm @ 50A, 10V
Vgs (th) (Max) @ kt : 3.3V @ 95µA
Hliðargjald (Qg) (Max) @ Vgs : 95nC @ 10V
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : 6500pF @ 30V
FET lögun : -
Dreifing orku (Max) : 3W (Ta), 167W (Tc)
Vinnuhitastig : -55°C ~ 175°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : PG-TDSON-8 FL
Pakki / mál : 8-PowerTDFN

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