IPI086N10N3GXKSA1 Verðlagning (USD) [53136stk lager]
- 1 pcs$0.67732
- 10 pcs$0.59872
- 100 pcs$0.47325
- 500 pcs$0.34717
- 1,000 pcs$0.27408
- Hlutanúmer:
- IPI086N10N3GXKSA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 100V 80A TO262-3.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - Arrays, Transistors - Tvíhverfur (BJT) - RF, Díóða - Zener - Stakur, Thyristors - DIACs, SIDACs, Smára - tvíhverfa (BJT) - fylki, Díóða - Bríta leiðréttingar, Transistors - FETs, MOSFETs - RF and Transistors - Tvíhverfur (BJT) - Single ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IPI086N10N3GXKSA1 electronic components. IPI086N10N3GXKSA1 can be shipped within 24 hours after order. If you have any demands for IPI086N10N3GXKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPI086N10N3GXKSA1 Vörueiginleikar
Hlutanúmer :
IPI086N10N3GXKSA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 100V 80A TO262-3
Röð :
OptiMOS™
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
80A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
8.6 mOhm @ 73A, 10V
Vgs (th) (Max) @ kt :
3.5V @ 75µA
Hliðargjald (Qg) (Max) @ Vgs :
55nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
3980pF @ 50V
FET lögun :
-
Dreifing orku (Max) :
125W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
PG-TO262-3
Pakki / mál :
TO-262-3 Long Leads, I²Pak, TO-262AA
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