[2597stk lager]
- Hlutanúmer:
- IPD80R1K4CEBTMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 800V 3.9A TO252-3.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - RF, Thyristors - TRIACs, Díóða - leiðréttingar - fylki, Transistors - JFETs, Transistors - IGBTs - mát, Díóða - RF, Smára - tvíhverfa (BJT) - fylki and Smára - tvíhverfa (BJT) - fylki, forspeglast ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IPD80R1K4CEBTMA1 electronic components. IPD80R1K4CEBTMA1 can be shipped within 24 hours after order. If you have any demands for IPD80R1K4CEBTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD80R1K4CEBTMA1 Vörueiginleikar
Hlutanúmer :
IPD80R1K4CEBTMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 800V 3.9A TO252-3
Röð :
CoolMOS™
Hluti staða :
Discontinued at Digi-Key
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
800V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
3.9A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.4 Ohm @ 2.3A, 10V
Vgs (th) (Max) @ kt :
3.9V @ 240µA
Hliðargjald (Qg) (Max) @ Vgs :
23nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
570pF @ 100V
FET lögun :
-
Dreifing orku (Max) :
63W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
TO-252-3
Pakki / mál :
TO-252-3, DPak (2 Leads + Tab), SC-63
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