IPD50R650CEATMA1 Verðlagning (USD) [2739stk lager]
- 2,500 pcs$0.11645
- Hlutanúmer:
- IPD50R650CEATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N CH 500V 6.1A PG-TO252.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - mát, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Single, Díóða - leiðréttingar - fylki, Thyristors - SCRs - mát, Díóða - Bríta leiðréttingar and Díóða - RF ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IPD50R650CEATMA1 electronic components. IPD50R650CEATMA1 can be shipped within 24 hours after order. If you have any demands for IPD50R650CEATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD50R650CEATMA1 Vörueiginleikar
Hlutanúmer :
IPD50R650CEATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N CH 500V 6.1A PG-TO252
Röð :
CoolMOS™ CE
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
500V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
6.1A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
13V
Rds On (Max) @ Id, Vgs :
650 mOhm @ 1.8A, 13V
Vgs (th) (Max) @ kt :
3.5V @ 150µA
Hliðargjald (Qg) (Max) @ Vgs :
15nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
342pF @ 100V
FET lögun :
-
Dreifing orku (Max) :
69W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-TO252-3
Pakki / mál :
TO-252-3, DPak (2 Leads + Tab), SC-63
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