[3440stk lager]
- Hlutanúmer:
- IRF640,127
- Framleiðandi:
- NXP USA Inc.
- Nákvæm lýsing:
- MOSFET N-CH 200V 16A TO220AB.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - mát, Díóða - breytileg getu, Transistors - FETs, MOSFETs - Single, Kerfisstjóratæki, Smára - tvíhverfa (BJT) - fylki, forspeglast, Transistors - Tvíhverfur (BJT) - Single, Transistors - JFETs and Transistors - FETs, MOSFETs - RF ...
- Samkeppnisforskot:
- We specialize in NXP USA Inc. IRF640,127 electronic components. IRF640,127 can be shipped within 24 hours after order. If you have any demands for IRF640,127, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF640,127 Vörueiginleikar
Hlutanúmer :
IRF640,127
Framleiðandi :
NXP USA Inc.
Lýsing :
MOSFET N-CH 200V 16A TO220AB
Röð :
TrenchMOS™
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
200V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
16A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
180 mOhm @ 8A, 10V
Vgs (th) (Max) @ kt :
4V @ 1mA
Hliðargjald (Qg) (Max) @ Vgs :
63nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
1850pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
136W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
TO-220AB
Pakki / mál :
TO-220-3
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