Infineon Technologies - IPB80N06S405ATMA1

KEY Part #: K6412927

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    Hlutanúmer:
    IPB80N06S405ATMA1
    Framleiðandi:
    Infineon Technologies
    Nákvæm lýsing:
    MOSFET N-CH 60V 80A TO263-3.
    Venjulegur framleiðslutími framleiðanda:
    Á lager
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    Eitt ár
    Flís frá:
    Hong Kong
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    Greiðslumáti:
    Sendingarleið:
    Fjölskylduflokkar:
    KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - SCRs - mát, Thyristors - TRIACs, Díóða - Zener - Fylki, Transistors - Tvíhverfur (BJT) - RF, Díóða - RF, Transistors - FETs, MOSFETs - Arrays, Díóða - Bríta leiðréttingar and Transistors - IGBTs - Arrays ...
    Samkeppnisforskot:
    We specialize in Infineon Technologies IPB80N06S405ATMA1 electronic components. IPB80N06S405ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB80N06S405ATMA1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IPB80N06S405ATMA1 Vörueiginleikar

    Hlutanúmer : IPB80N06S405ATMA1
    Framleiðandi : Infineon Technologies
    Lýsing : MOSFET N-CH 60V 80A TO263-3
    Röð : OptiMOS™
    Hluti staða : Discontinued at Digi-Key
    FET gerð : N-Channel
    Tækni : MOSFET (Metal Oxide)
    Afrennsli að uppspennu (Vdss) : 60V
    Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 80A (Tc)
    Drifspenna (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 5.4 mOhm @ 80A, 10V
    Vgs (th) (Max) @ kt : 4V @ 60µA
    Hliðargjald (Qg) (Max) @ Vgs : 81nC @ 10V
    Vgs (hámark) : ±20V
    Inntaksrýmd (Ciss) (Max) @ Vds : 6500pF @ 25V
    FET lögun : -
    Dreifing orku (Max) : 107W (Tc)
    Vinnuhitastig : -55°C ~ 175°C (TJ)
    Festingargerð : Surface Mount
    Birgir tæki pakki : PG-TO263-3-2
    Pakki / mál : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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