SIZ914DT-T1-GE3 Verðlagning (USD) [4062stk lager]
- 3,000 pcs$0.32508
- Hlutanúmer:
- SIZ914DT-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET 2N-CH 30V 16A PWRPAIR.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - sérstök tilgangur, Transistors - IGBTs - Arrays, Díóða - Zener - Stakur, Transistors - Tvíhverfur (BJT) - RF, Díóða - leiðréttingar - stakir, Smára - tvíhverfa (BJT) - fylki, forspeglast, Transistors - FETs, MOSFETs - Arrays and Díóða - RF ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SIZ914DT-T1-GE3 electronic components. SIZ914DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZ914DT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIZ914DT-T1-GE3 Vörueiginleikar
Hlutanúmer :
SIZ914DT-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET 2N-CH 30V 16A PWRPAIR
Röð :
TrenchFET®
Hluti staða :
Obsolete
FET gerð :
2 N-Channel (Half Bridge)
FET lögun :
Logic Level Gate
Afrennsli að uppspennu (Vdss) :
30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
16A, 40A
Rds On (Max) @ Id, Vgs :
6.4 mOhm @ 19A, 10V
Vgs (th) (Max) @ kt :
2.4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
26nC @ 10V
Inntaksrýmd (Ciss) (Max) @ Vds :
1208pF @ 15V
Afl - Max :
22.7W, 100W
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
8-PowerWDFN
Birgir tæki pakki :
8-PowerPair®
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