SQJB80EP-T1_GE3 Verðlagning (USD) [164478stk lager]
- 1 pcs$0.22488
- 3,000 pcs$0.19003
- Hlutanúmer:
- SQJB80EP-T1_GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET 2 N-CH 80V POWERPAK SO8.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - mát, Díóða - leiðréttingar - stakir, Transistors - Forritanleg sameining, Díóða - leiðréttingar - fylki, Díóða - breytileg getu, Kerfisstjóratæki, Transistors - IGBTs - Arrays and Thyristors - SCRs - mát ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SQJB80EP-T1_GE3 electronic components. SQJB80EP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJB80EP-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQJB80EP-T1_GE3 Vörueiginleikar
Hlutanúmer :
SQJB80EP-T1_GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET 2 N-CH 80V POWERPAK SO8
Röð :
Automotive, AEC-Q101, TrenchFET®
Hluti staða :
Active
FET gerð :
2 N-Channel (Dual)
FET lögun :
Standard
Afrennsli að uppspennu (Vdss) :
80V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
30A (Tc)
Rds On (Max) @ Id, Vgs :
19 mOhm @ 8A, 10V
Vgs (th) (Max) @ kt :
2.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
32nC @ 10V
Inntaksrýmd (Ciss) (Max) @ Vds :
1400pF @ 25V
Afl - Max :
48W
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
PowerPAK® SO-8 Dual
Birgir tæki pakki :
PowerPAK® SO-8 Dual
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