SQV120N10-3M8_GE3 Verðlagning (USD) [45191stk lager]
- 1 pcs$0.86522
- Hlutanúmer:
- SQV120N10-3M8_GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 100V 120A TO262-3.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Díóða - RF, Díóða - leiðréttingar - fylki, Smára - tvíhverfa (BJT) - fylki, Transistors - Forritanleg sameining, Díóða - Bríta leiðréttingar, Transistors - FETs, MOSFETs - RF and Díóða - breytileg getu ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SQV120N10-3M8_GE3 electronic components. SQV120N10-3M8_GE3 can be shipped within 24 hours after order. If you have any demands for SQV120N10-3M8_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQV120N10-3M8_GE3 Vörueiginleikar
Hlutanúmer :
SQV120N10-3M8_GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 100V 120A TO262-3
Röð :
Automotive, AEC-Q101, TrenchFET®
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
120A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3.8 mOhm @ 20A, 10V
Vgs (th) (Max) @ kt :
3.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
190nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
7230pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
250W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
TO-262-3
Pakki / mál :
TO-262-3 Long Leads, I²Pak, TO-262AA
Nýjustu fréttir
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