DMN2009LSS-13 Verðlagning (USD) [289449stk lager]
- 1 pcs$0.12779
- 2,500 pcs$0.11355
- Hlutanúmer:
- DMN2009LSS-13
- Framleiðandi:
- Diodes Incorporated
- Nákvæm lýsing:
- MOSFET N-CH 20V 12A 8-SOIC.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - RF, Thyristors - DIACs, SIDACs, Transistors - IGBTs - mát, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - Single, Díóða - leiðréttingar - stakir, Díóða - Zener - Stakur and Kerfisstjóratæki ...
- Samkeppnisforskot:
- We specialize in Diodes Incorporated DMN2009LSS-13 electronic components. DMN2009LSS-13 can be shipped within 24 hours after order. If you have any demands for DMN2009LSS-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN2009LSS-13 Vörueiginleikar
Hlutanúmer :
DMN2009LSS-13
Framleiðandi :
Diodes Incorporated
Lýsing :
MOSFET N-CH 20V 12A 8-SOIC
Röð :
-
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
12A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
2.5V, 10V
Rds On (Max) @ Id, Vgs :
8 mOhm @ 12A, 10V
Vgs (th) (Max) @ kt :
1.2V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
58.3nC @ 10V
Vgs (hámark) :
±12V
Inntaksrýmd (Ciss) (Max) @ Vds :
2555pF @ 10V
FET lögun :
-
Dreifing orku (Max) :
2W (Ta)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
8-SOP
Pakki / mál :
8-SOIC (0.154", 3.90mm Width)
Nýjustu fréttir
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