IAUS165N08S5N029ATMA1 Verðlagning (USD) [42793stk lager]
- 1 pcs$0.91372
- Hlutanúmer:
- IAUS165N08S5N029ATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 80V 660A PG-HSOG-8-1.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - JFETs, Thyristors - SCRs - mát, Díóða - leiðréttingar - fylki, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Thyristors - SCR, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Single and Transistors - sérstök tilgangur ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IAUS165N08S5N029ATMA1 electronic components. IAUS165N08S5N029ATMA1 can be shipped within 24 hours after order. If you have any demands for IAUS165N08S5N029ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IAUS165N08S5N029ATMA1 Vörueiginleikar
Hlutanúmer :
IAUS165N08S5N029ATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 80V 660A PG-HSOG-8-1
Röð :
Automotive, AEC-Q101, OptiMOS™
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
80V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
165A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
2.9 mOhm @ 80A, 10V
Vgs (th) (Max) @ kt :
3.8V @ 108µA
Hliðargjald (Qg) (Max) @ Vgs :
90nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
6370pF @ 40V
FET lögun :
-
Dreifing orku (Max) :
167W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-HSOG-8-1
Pakki / mál :
8-PowerSMD, Gull Wing
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