BSZ0909NSATMA1 Verðlagning (USD) [402917stk lager]
- 1 pcs$0.09180
- 5,000 pcs$0.08810
- Hlutanúmer:
- BSZ0909NSATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 34V 9A 8TSDSON.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Smára - tvíhverfa (BJT) - fylki, Díóða - Bríta leiðréttingar, Díóða - leiðréttingar - stakir, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Díóða - Zener - Fylki, Thyristors - DIACs, SIDACs, Transistors - JFETs and Díóða - RF ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies BSZ0909NSATMA1 electronic components. BSZ0909NSATMA1 can be shipped within 24 hours after order. If you have any demands for BSZ0909NSATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSZ0909NSATMA1 Vörueiginleikar
Hlutanúmer :
BSZ0909NSATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 34V 9A 8TSDSON
Röð :
OptiMOS™
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
34V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
9A (Ta), 36A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
12 mOhm @ 20A, 10V
Vgs (th) (Max) @ kt :
2V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
17nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
1310pF @ 15V
FET lögun :
-
Dreifing orku (Max) :
2.1W (Ta), 25W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-TSDSON-8
Pakki / mál :
8-PowerTDFN
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