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- Hlutanúmer:
- IPD068N10N3GBTMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 100V 90A TO252-3.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - SCRs - mát, Transistors - FETs, MOSFETs - Single, Thyristors - DIACs, SIDACs, Transistors - JFETs, Díóða - Zener - Fylki, Transistors - Forritanleg sameining, Díóða - Bríta leiðréttingar and Transistors - IGBTs - Arrays ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IPD068N10N3GBTMA1 electronic components. IPD068N10N3GBTMA1 can be shipped within 24 hours after order. If you have any demands for IPD068N10N3GBTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD068N10N3GBTMA1 Vörueiginleikar
Hlutanúmer :
IPD068N10N3GBTMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 100V 90A TO252-3
Röð :
OptiMOS™
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
90A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
6.8 mOhm @ 90A, 10V
Vgs (th) (Max) @ kt :
3.5V @ 90µA
Hliðargjald (Qg) (Max) @ Vgs :
68nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
4910pF @ 50V
FET lögun :
-
Dreifing orku (Max) :
150W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-TO252-3
Pakki / mál :
TO-252-3, DPak (2 Leads + Tab), SC-63
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