IPP023NE7N3GXKSA1 Verðlagning (USD) [14520stk lager]
- 1 pcs$2.83811
- Hlutanúmer:
- IPP023NE7N3GXKSA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 75V 120A TO220.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - RF, Díóða - Zener - Fylki, Smára - tvíhverfa (BJT) - fylki, Transistors - JFETs, Díóða - breytileg getu, Transistors - FETs, MOSFETs - RF, Thyristors - SCR and Transistors - FETs, MOSFETs - Single ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IPP023NE7N3GXKSA1 electronic components. IPP023NE7N3GXKSA1 can be shipped within 24 hours after order. If you have any demands for IPP023NE7N3GXKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPP023NE7N3GXKSA1 Vörueiginleikar
Hlutanúmer :
IPP023NE7N3GXKSA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 75V 120A TO220
Röð :
OptiMOS™
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
75V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
120A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.3 mOhm @ 100A, 10V
Vgs (th) (Max) @ kt :
3.8V @ 273µA
Hliðargjald (Qg) (Max) @ Vgs :
206nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
14400pF @ 37.5V
FET lögun :
-
Dreifing orku (Max) :
300W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
PG-TO220-3-1
Pakki / mál :
TO-220-3
Nýjustu fréttir
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