IXFR4N100Q Verðlagning (USD) [7392stk lager]
- 1 pcs$6.13454
- Hlutanúmer:
- IXFR4N100Q
- Framleiðandi:
- IXYS
- Nákvæm lýsing:
- MOSFET N-CH 1KV 3.5A ISOPLUS247.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - Bríta leiðréttingar, Díóða - breytileg getu, Thyristors - SCR, Transistors - Tvíhverfur (BJT) - RF, Transistors - sérstök tilgangur, Díóða - leiðréttingar - stakir, Thyristors - SCRs - mát and Díóða - RF ...
- Samkeppnisforskot:
- We specialize in IXYS IXFR4N100Q electronic components. IXFR4N100Q can be shipped within 24 hours after order. If you have any demands for IXFR4N100Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFR4N100Q Vörueiginleikar
Hlutanúmer :
IXFR4N100Q
Framleiðandi :
IXYS
Lýsing :
MOSFET N-CH 1KV 3.5A ISOPLUS247
Röð :
HiPerFET™
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
1000V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
3.5A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3 Ohm @ 2A, 10V
Vgs (th) (Max) @ kt :
5V @ 1.5mA
Hliðargjald (Qg) (Max) @ Vgs :
39nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
1050pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
80W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
ISOPLUS247™
Pakki / mál :
ISOPLUS247™
Nýjustu fréttir
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