Infineon Technologies - IRL8114PBF

KEY Part #: K6418684

IRL8114PBF Verðlagning (USD) [73223stk lager]

  • 1 pcs$0.53399
  • 1,000 pcs$0.48815

Hlutanúmer:
IRL8114PBF
Framleiðandi:
Infineon Technologies
Nákvæm lýsing:
MOSFET N-CH 30V 90A TO-220AB.
Venjulegur framleiðslutími framleiðanda:
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Hong Kong
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KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - Zener - Fylki, Transistors - Tvíhverfur (BJT) - Single, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - RF, Díóða - leiðréttingar - fylki, Thyristors - SCR, Díóða - Bríta leiðréttingar and Thyristors - DIACs, SIDACs ...
Samkeppnisforskot:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRL8114PBF Vörueiginleikar

Hlutanúmer : IRL8114PBF
Framleiðandi : Infineon Technologies
Lýsing : MOSFET N-CH 30V 90A TO-220AB
Röð : HEXFET®
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 90A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 4.5 mOhm @ 40A, 10V
Vgs (th) (Max) @ kt : 2.25V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs : 29nC @ 4.5V
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : 2660pF @ 15V
FET lögun : -
Dreifing orku (Max) : 115W (Tc)
Vinnuhitastig : -55°C ~ 175°C (TJ)
Festingargerð : Through Hole
Birgir tæki pakki : TO-220AB
Pakki / mál : TO-220-3

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