BSZ086P03NS3EGATMA1 Verðlagning (USD) [279894stk lager]
- 1 pcs$0.13215
- Hlutanúmer:
- BSZ086P03NS3EGATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET P-CH 30V 40A TSDSON-8.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - sérstök tilgangur, Díóða - Zener - Fylki, Transistors - Tvíhverfur (BJT) - Single, Transistors - JFETs, Díóða - leiðréttingar - stakir, Thyristors - DIACs, SIDACs, Thyristors - SCR and Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies BSZ086P03NS3EGATMA1 electronic components. BSZ086P03NS3EGATMA1 can be shipped within 24 hours after order. If you have any demands for BSZ086P03NS3EGATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSZ086P03NS3EGATMA1 Vörueiginleikar
Hlutanúmer :
BSZ086P03NS3EGATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET P-CH 30V 40A TSDSON-8
Röð :
OptiMOS™
Hluti staða :
Active
FET gerð :
P-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
13.5A (Ta), 40A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
8.6 mOhm @ 20A, 10V
Vgs (th) (Max) @ kt :
3.1V @ 105µA
Hliðargjald (Qg) (Max) @ Vgs :
57.5nC @ 10V
Vgs (hámark) :
±25V
Inntaksrýmd (Ciss) (Max) @ Vds :
4785pF @ 15V
FET lögun :
-
Dreifing orku (Max) :
2.1W (Ta), 69W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-TSDSON-8
Pakki / mál :
8-PowerTDFN
Nýjustu fréttir
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