BSC026N04LSATMA1 Verðlagning (USD) [157448stk lager]
- 1 pcs$0.23492
- 5,000 pcs$0.21987
- Hlutanúmer:
- BSC026N04LSATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 40V 23A 8TDSON.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - RF, Thyristors - SCRs - mát, Transistors - sérstök tilgangur, Transistors - JFETs, Díóða - leiðréttingar - stakir, Thyristors - TRIACs and Díóða - RF ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies BSC026N04LSATMA1 electronic components. BSC026N04LSATMA1 can be shipped within 24 hours after order. If you have any demands for BSC026N04LSATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC026N04LSATMA1 Vörueiginleikar
Hlutanúmer :
BSC026N04LSATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 40V 23A 8TDSON
Röð :
OptiMOS™
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
40V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
23A (Ta), 100A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
2.6 mOhm @ 50A, 10V
Vgs (th) (Max) @ kt :
2V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
32nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
2300pF @ 20V
FET lögun :
-
Dreifing orku (Max) :
2.5W (Ta), 63W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-TDSON-8
Pakki / mál :
8-PowerTDFN
Nýjustu fréttir
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