Infineon Technologies - BTS113ANKSA1

KEY Part #: K6409924

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    Hlutanúmer:
    BTS113ANKSA1
    Framleiðandi:
    Infineon Technologies
    Nákvæm lýsing:
    MOSFET N-CH 60V 11.5A TO-220AB.
    Venjulegur framleiðslutími framleiðanda:
    Á lager
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    Eitt ár
    Flís frá:
    Hong Kong
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    Fjölskylduflokkar:
    KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - RF, Transistors - JFETs, Kerfisstjóratæki, Transistors - FETs, MOSFETs - Arrays, Thyristors - DIACs, SIDACs, Díóða - Bríta leiðréttingar, Smára - tvíhverfa (BJT) - fylki, forspeglast and Transistors - IGBTs - Single ...
    Samkeppnisforskot:
    We specialize in Infineon Technologies BTS113ANKSA1 electronic components. BTS113ANKSA1 can be shipped within 24 hours after order. If you have any demands for BTS113ANKSA1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BTS113ANKSA1 Vörueiginleikar

    Hlutanúmer : BTS113ANKSA1
    Framleiðandi : Infineon Technologies
    Lýsing : MOSFET N-CH 60V 11.5A TO-220AB
    Röð : TEMPFET®
    Hluti staða : Obsolete
    FET gerð : N-Channel
    Tækni : MOSFET (Metal Oxide)
    Afrennsli að uppspennu (Vdss) : 60V
    Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 11.5A (Tc)
    Drifspenna (Max Rds On, Min Rds On) : 4.5V
    Rds On (Max) @ Id, Vgs : 170 mOhm @ 5.8A, 4.5V
    Vgs (th) (Max) @ kt : 2.5V @ 1mA
    Hliðargjald (Qg) (Max) @ Vgs : -
    Vgs (hámark) : ±10V
    Inntaksrýmd (Ciss) (Max) @ Vds : 560pF @ 25V
    FET lögun : -
    Dreifing orku (Max) : 40W (Tc)
    Vinnuhitastig : -55°C ~ 150°C (TJ)
    Festingargerð : Through Hole
    Birgir tæki pakki : P-TO220AB
    Pakki / mál : TO-220-3

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