Infineon Technologies - BSP295L6327HTSA1

KEY Part #: K6409356

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    Hlutanúmer:
    BSP295L6327HTSA1
    Framleiðandi:
    Infineon Technologies
    Nákvæm lýsing:
    MOSFET N-CH 60V 1.8A SOT-223.
    Venjulegur framleiðslutími framleiðanda:
    Á lager
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    Flís frá:
    Hong Kong
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    Fjölskylduflokkar:
    KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - FETs, MOSFETs - Arrays, Transistors - JFETs, Transistors - Tvíhverfur (BJT) - Single, Díóða - Zener - Fylki, Transistors - IGBTs - mát, Smára - tvíhverfa (BJT) - fylki, Smára - tvíhverfa (BJT) - fylki, forspeglast and Kerfisstjóratæki ...
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    We specialize in Infineon Technologies BSP295L6327HTSA1 electronic components. BSP295L6327HTSA1 can be shipped within 24 hours after order. If you have any demands for BSP295L6327HTSA1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BSP295L6327HTSA1 Vörueiginleikar

    Hlutanúmer : BSP295L6327HTSA1
    Framleiðandi : Infineon Technologies
    Lýsing : MOSFET N-CH 60V 1.8A SOT-223
    Röð : SIPMOS®
    Hluti staða : Obsolete
    FET gerð : N-Channel
    Tækni : MOSFET (Metal Oxide)
    Afrennsli að uppspennu (Vdss) : 60V
    Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 1.8A (Ta)
    Drifspenna (Max Rds On, Min Rds On) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 300 mOhm @ 1.8A, 10V
    Vgs (th) (Max) @ kt : 1.8V @ 400µA
    Hliðargjald (Qg) (Max) @ Vgs : 17nC @ 10V
    Vgs (hámark) : ±20V
    Inntaksrýmd (Ciss) (Max) @ Vds : 368pF @ 25V
    FET lögun : -
    Dreifing orku (Max) : 1.8W (Ta)
    Vinnuhitastig : -55°C ~ 150°C (TJ)
    Festingargerð : Surface Mount
    Birgir tæki pakki : PG-SOT223-4
    Pakki / mál : TO-261-4, TO-261AA

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