SI7611DN-T1-GE3 Verðlagning (USD) [111328stk lager]
- 1 pcs$0.33224
- 3,000 pcs$0.31128
- Hlutanúmer:
- SI7611DN-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET P-CH 40V 18A 1212-8.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - RF, Díóða - Bríta leiðréttingar, Díóða - Zener - Stakur, Díóða - Zener - Fylki, Smára - tvíhverfa (BJT) - fylki, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Díóða - RF and Transistors - Forritanleg sameining ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI7611DN-T1-GE3 electronic components. SI7611DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7611DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI7611DN-T1-GE3 Vörueiginleikar
Hlutanúmer :
SI7611DN-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET P-CH 40V 18A 1212-8
Röð :
TrenchFET®
Hluti staða :
Active
FET gerð :
P-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
40V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
18A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
25 mOhm @ 9.3A, 10V
Vgs (th) (Max) @ kt :
3V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
62nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
1980pF @ 20V
FET lögun :
-
Dreifing orku (Max) :
3.7W (Ta), 39W (Tc)
Vinnuhitastig :
-50°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PowerPAK® 1212-8
Pakki / mál :
PowerPAK® 1212-8
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