BSC079N10NSGATMA1 Verðlagning (USD) [79387stk lager]
- 1 pcs$0.49253
- 5,000 pcs$0.47280
- Hlutanúmer:
- BSC079N10NSGATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 100V 100A TDSON-8.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - Single, Díóða - RF, Díóða - leiðréttingar - fylki, Díóða - breytileg getu, Díóða - leiðréttingar - stakir, Díóða - Zener - Fylki, Smára - tvíhverfa (BJT) - fylki and Transistors - JFETs ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies BSC079N10NSGATMA1 electronic components. BSC079N10NSGATMA1 can be shipped within 24 hours after order. If you have any demands for BSC079N10NSGATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC079N10NSGATMA1 Vörueiginleikar
Hlutanúmer :
BSC079N10NSGATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 100V 100A TDSON-8
Röð :
OptiMOS™
Hluti staða :
Not For New Designs
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
13.4A (Ta), 100A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
7.9 mOhm @ 50A, 10V
Vgs (th) (Max) @ kt :
4V @ 110µA
Hliðargjald (Qg) (Max) @ Vgs :
87nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
5900pF @ 50V
FET lögun :
-
Dreifing orku (Max) :
156W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-TDSON-8
Pakki / mál :
8-PowerTDFN
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