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- Hlutanúmer:
- IPD122N10N3GBTMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 100V 59A TO252-3.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - Zener - Fylki, Transistors - sérstök tilgangur, Díóða - leiðréttingar - stakir, Transistors - FETs, MOSFETs - Arrays, Díóða - Zener - Stakur, Smára - tvíhverfa (BJT) - fylki, Transistors - Tvíhverfur (BJT) - Single and Thyristors - SCR ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IPD122N10N3GBTMA1 electronic components. IPD122N10N3GBTMA1 can be shipped within 24 hours after order. If you have any demands for IPD122N10N3GBTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD122N10N3GBTMA1 Vörueiginleikar
Hlutanúmer :
IPD122N10N3GBTMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 100V 59A TO252-3
Röð :
OptiMOS™
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
59A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
12.2 mOhm @ 46A, 10V
Vgs (th) (Max) @ kt :
3.5V @ 46µA
Hliðargjald (Qg) (Max) @ Vgs :
35nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
2500pF @ 50V
FET lögun :
-
Dreifing orku (Max) :
94W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-TO252-3
Pakki / mál :
TO-252-3, DPak (2 Leads + Tab), SC-63
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