[2912stk lager]
- Hlutanúmer:
- DMN10H170SFG-7
- Framleiðandi:
- Diodes Incorporated
- Nákvæm lýsing:
- MOSFET N-CH 100V 2.9A POWERDI.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - Bríta leiðréttingar, Transistors - FETs, MOSFETs - Arrays, Transistors - Tvíhverfur (BJT) - RF, Thyristors - SCRs - mát, Díóða - Zener - Fylki, Transistors - IGBTs - mát, Díóða - leiðréttingar - fylki and Transistors - Forritanleg sameining ...
- Samkeppnisforskot:
- We specialize in Diodes Incorporated DMN10H170SFG-7 electronic components. DMN10H170SFG-7 can be shipped within 24 hours after order. If you have any demands for DMN10H170SFG-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN10H170SFG-7 Vörueiginleikar
Hlutanúmer :
DMN10H170SFG-7
Framleiðandi :
Diodes Incorporated
Lýsing :
MOSFET N-CH 100V 2.9A POWERDI
Röð :
-
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
2.9A (Ta), 8.5A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
122 mOhm @ 3.3A, 10V
Vgs (th) (Max) @ kt :
3V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
14.9nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
870.7pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
940mW (Ta)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PowerDI3333-8
Pakki / mál :
8-PowerWDFN
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