[585stk lager]
- Hlutanúmer:
- TN0200K-T1-E3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 20V SOT23-3.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - RF, Transistors - Forritanleg sameining, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Díóða - leiðréttingar - stakir, Díóða - Bríta leiðréttingar, Transistors - FETs, MOSFETs - RF, Smára - tvíhverfa (BJT) - fylki and Transistors - IGBTs - mát ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix TN0200K-T1-E3 electronic components. TN0200K-T1-E3 can be shipped within 24 hours after order. If you have any demands for TN0200K-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TN0200K-T1-E3 Vörueiginleikar
Hlutanúmer :
TN0200K-T1-E3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 20V SOT23-3
Röð :
TrenchFET®
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
-
Drifspenna (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
400 mOhm @ 600mA, 4.5V
Vgs (th) (Max) @ kt :
1V @ 50µA
Hliðargjald (Qg) (Max) @ Vgs :
2nC @ 4.5V
Vgs (hámark) :
±8V
Inntaksrýmd (Ciss) (Max) @ Vds :
-
FET lögun :
-
Dreifing orku (Max) :
350mW (Ta)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
SOT-23-3 (TO-236)
Pakki / mál :
TO-236-3, SC-59, SOT-23-3
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