SIRA80DP-T1-RE3 Verðlagning (USD) [115015stk lager]
- 1 pcs$0.32159
- Hlutanúmer:
- SIRA80DP-T1-RE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CHAN 30V POWERPAK SO-8.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - Zener - Fylki, Transistors - FETs, MOSFETs - RF, Díóða - RF, Transistors - Forritanleg sameining, Díóða - Bríta leiðréttingar, Transistors - Tvíhverfur (BJT) - RF, Díóða - breytileg getu and Thyristors - TRIACs ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SIRA80DP-T1-RE3 electronic components. SIRA80DP-T1-RE3 can be shipped within 24 hours after order. If you have any demands for SIRA80DP-T1-RE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIRA80DP-T1-RE3 Vörueiginleikar
Hlutanúmer :
SIRA80DP-T1-RE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CHAN 30V POWERPAK SO-8
Röð :
TrenchFET® Gen IV
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
100A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
0.62 mOhm @ 20A, 10V
Vgs (th) (Max) @ kt :
2.2V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
188nC @ 10V
Vgs (hámark) :
+20V, -16V
Inntaksrýmd (Ciss) (Max) @ Vds :
9530pF @ 15V
FET lögun :
-
Dreifing orku (Max) :
104W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PowerPAK® SO-8
Pakki / mál :
PowerPAK® SO-8
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