TK32E12N1,S1X Verðlagning (USD) [66326stk lager]
- 1 pcs$0.64806
- 50 pcs$0.51895
- 100 pcs$0.45410
- 500 pcs$0.33312
- 1,000 pcs$0.26299
- Hlutanúmer:
- TK32E12N1,S1X
- Framleiðandi:
- Toshiba Semiconductor and Storage
- Nákvæm lýsing:
- MOSFET N CH 120V 60A TO-220.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - breytileg getu, Kerfisstjóratæki, Díóða - leiðréttingar - stakir, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Single, Díóða - Zener - Fylki, Díóða - Bríta leiðréttingar and Transistors - sérstök tilgangur ...
- Samkeppnisforskot:
- We specialize in Toshiba Semiconductor and Storage TK32E12N1,S1X electronic components. TK32E12N1,S1X can be shipped within 24 hours after order. If you have any demands for TK32E12N1,S1X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK32E12N1,S1X Vörueiginleikar
Hlutanúmer :
TK32E12N1,S1X
Framleiðandi :
Toshiba Semiconductor and Storage
Lýsing :
MOSFET N CH 120V 60A TO-220
Röð :
U-MOSVIII-H
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
120V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
60A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
13.8 mOhm @ 16A, 10V
Vgs (th) (Max) @ kt :
4V @ 500µA
Hliðargjald (Qg) (Max) @ Vgs :
34nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
2000pF @ 60V
FET lögun :
-
Dreifing orku (Max) :
98W (Tc)
Vinnuhitastig :
150°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
TO-220
Pakki / mál :
TO-220-3
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