[12284stk lager]
- Hlutanúmer:
- STB11NM60-1
- Framleiðandi:
- STMicroelectronics
- Nákvæm lýsing:
- MOSFET N-CH 650V 11A I2PAK.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Smára - tvíhverfa (BJT) - fylki, forspeglast, Thyristors - DIACs, SIDACs, Transistors - JFETs, Kerfisstjóratæki, Díóða - Zener - Fylki, Transistors - IGBTs - mát, Transistors - sérstök tilgangur and Díóða - leiðréttingar - fylki ...
- Samkeppnisforskot:
- We specialize in STMicroelectronics STB11NM60-1 electronic components. STB11NM60-1 can be shipped within 24 hours after order. If you have any demands for STB11NM60-1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STB11NM60-1 Vörueiginleikar
Hlutanúmer :
STB11NM60-1
Framleiðandi :
STMicroelectronics
Lýsing :
MOSFET N-CH 650V 11A I2PAK
Röð :
MDmesh™
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
650V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
11A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
450 mOhm @ 5.5A, 10V
Vgs (th) (Max) @ kt :
5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
30nC @ 10V
Vgs (hámark) :
±30V
Inntaksrýmd (Ciss) (Max) @ Vds :
1000pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
160W (Tc)
Vinnuhitastig :
-65°C ~ 150°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
I2PAK
Pakki / mál :
TO-262-3 Long Leads, I²Pak, TO-262AA
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