IPB180N06S4H1ATMA2 Verðlagning (USD) [42768stk lager]
- 1 pcs$0.91424
- 1,000 pcs$0.74580
- Hlutanúmer:
- IPB180N06S4H1ATMA2
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 60V 180A TO263-7.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Díóða - breytileg getu, Díóða - RF, Díóða - Zener - Fylki, Smára - tvíhverfa (BJT) - fylki, forspeglast, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf and Thyristors - TRIACs ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IPB180N06S4H1ATMA2 electronic components. IPB180N06S4H1ATMA2 can be shipped within 24 hours after order. If you have any demands for IPB180N06S4H1ATMA2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB180N06S4H1ATMA2 Vörueiginleikar
Hlutanúmer :
IPB180N06S4H1ATMA2
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 60V 180A TO263-7
Röð :
Automotive, AEC-Q101, OptiMOS™
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
60V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
180A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.7 mOhm @ 100A, 10V
Vgs (th) (Max) @ kt :
4V @ 200µA
Hliðargjald (Qg) (Max) @ Vgs :
270nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
21900pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
250W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-TO263-7-3
Pakki / mál :
TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
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