[305stk lager]
- Hlutanúmer:
- BSC029N025S G
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 25V 100A TDSON-8.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - SCRs - mát, Thyristors - SCR, Transistors - FETs, MOSFETs - RF, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays, Díóða - Zener - Stakur, Transistors - Forritanleg sameining and Díóða - Zener - Fylki ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies BSC029N025S G electronic components. BSC029N025S G can be shipped within 24 hours after order. If you have any demands for BSC029N025S G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC029N025S G Vörueiginleikar
Hlutanúmer :
BSC029N025S G
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 25V 100A TDSON-8
Röð :
OptiMOS™
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
25V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
24A (Ta), 100A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
2.9 mOhm @ 50A, 10V
Vgs (th) (Max) @ kt :
2V @ 80µA
Hliðargjald (Qg) (Max) @ Vgs :
41nC @ 5V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
5090pF @ 15V
FET lögun :
-
Dreifing orku (Max) :
2.8W (Ta), 78W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-TDSON-8
Pakki / mál :
8-PowerTDFN
Nýjustu fréttir
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