SQ1922EEH-T1_GE3 Verðlagning (USD) [485597stk lager]
- 1 pcs$0.07617
- Hlutanúmer:
- SQ1922EEH-T1_GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET 2N-CH 20V SC70-6.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Smára - tvíhverfa (BJT) - fylki, Kerfisstjóratæki, Transistors - JFETs, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Thyristors - TRIACs and Transistors - Forritanleg sameining ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SQ1922EEH-T1_GE3 electronic components. SQ1922EEH-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ1922EEH-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQ1922EEH-T1_GE3 Vörueiginleikar
Hlutanúmer :
SQ1922EEH-T1_GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET 2N-CH 20V SC70-6
Röð :
Automotive, AEC-Q101, TrenchFET®
Hluti staða :
Active
FET gerð :
2 N-Channel (Dual)
FET lögun :
Standard
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
840mA (Tc)
Rds On (Max) @ Id, Vgs :
350 mOhm @ 400mA, 4.5V
Vgs (th) (Max) @ kt :
1.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
1.2nC @ 4.5V
Inntaksrýmd (Ciss) (Max) @ Vds :
50pF @ 10V
Afl - Max :
1.5W
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
6-TSSOP, SC-88, SOT-363
Birgir tæki pakki :
SC-70-6
Nýjustu fréttir
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