SISS42DN-T1-GE3 Verðlagning (USD) [118007stk lager]
- 1 pcs$0.31343
- Hlutanúmer:
- SISS42DN-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CHAN 100V POWERPAK 1212.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - FETs, MOSFETs - Single, Díóða - leiðréttingar - stakir, Thyristors - TRIACs, Díóða - RF, Thyristors - SCR, Díóða - Zener - Stakur, Thyristors - DIACs, SIDACs and Transistors - FETs, MOSFETs - Arrays ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SISS42DN-T1-GE3 electronic components. SISS42DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISS42DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SISS42DN-T1-GE3 Vörueiginleikar
Hlutanúmer :
SISS42DN-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CHAN 100V POWERPAK 1212
Röð :
TrenchFET® Gen IV
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
11.8A (Ta), 40.5A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
7.5V, 10V
Rds On (Max) @ Id, Vgs :
14.4 mOhm @ 15A, 10V
Vgs (th) (Max) @ kt :
3.4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
38nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
1850pF @ 50V
FET lögun :
-
Dreifing orku (Max) :
4.8W (Ta), 57W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PowerPAK® 1212-8S
Pakki / mál :
PowerPAK® 1212-8S
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