SQJQ466E-T1_GE3 Verðlagning (USD) [63669stk lager]
- 1 pcs$0.61411
- 2,000 pcs$0.51781
- Hlutanúmer:
- SQJQ466E-T1_GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 60V 200A POWERPAK8.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - sérstök tilgangur, Díóða - Bríta leiðréttingar, Thyristors - TRIACs, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - Tvíhverfur (BJT) - RF, Transistors - Forritanleg sameining, Díóða - breytileg getu and Díóða - RF ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SQJQ466E-T1_GE3 electronic components. SQJQ466E-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJQ466E-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQJQ466E-T1_GE3 Vörueiginleikar
Hlutanúmer :
SQJQ466E-T1_GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 60V 200A POWERPAK8
Röð :
Automotive, AEC-Q101, TrenchFET®
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
60V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
200A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.9 mOhm @ 10A, 10V
Vgs (th) (Max) @ kt :
3.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
180nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
10210pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
150W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PowerPAK® 8 x 8
Pakki / mál :
8-PowerTDFN
Nýjustu fréttir
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