IXTA3N100D2HV Verðlagning (USD) [31249stk lager]
- 1 pcs$1.31884
- Hlutanúmer:
- IXTA3N100D2HV
- Framleiðandi:
- IXYS
- Nákvæm lýsing:
- MOSFET N-CH.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Kerfisstjóratæki, Smára - tvíhverfa (BJT) - fylki, forspeglast, Díóða - RF, Díóða - breytileg getu, Thyristors - DIACs, SIDACs, Díóða - leiðréttingar - stakir, Transistors - FETs, MOSFETs - RF and Transistors - IGBTs - Arrays ...
- Samkeppnisforskot:
- We specialize in IXYS IXTA3N100D2HV electronic components. IXTA3N100D2HV can be shipped within 24 hours after order. If you have any demands for IXTA3N100D2HV, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTA3N100D2HV Vörueiginleikar
Hlutanúmer :
IXTA3N100D2HV
Framleiðandi :
IXYS
Lýsing :
MOSFET N-CH
Röð :
-
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
1000V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
3A (Tj)
Drifspenna (Max Rds On, Min Rds On) :
0V
Rds On (Max) @ Id, Vgs :
6 Ohm @ 1.5A, 0V
Vgs (th) (Max) @ kt :
4.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
37.5nC @ 5V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
1020pF @ 25V
FET lögun :
Depletion Mode
Dreifing orku (Max) :
125W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
TO-263HV
Pakki / mál :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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