SIS429DNT-T1-GE3 Verðlagning (USD) [647879stk lager]
- 1 pcs$0.05709
- Hlutanúmer:
- SIS429DNT-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET P-CH 30V 20A POWERPAK1212.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - JFETs, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Díóða - Zener - Fylki, Thyristors - SCRs - mát, Transistors - sérstök tilgangur, Kerfisstjóratæki, Díóða - Bríta leiðréttingar and Transistors - IGBTs - Arrays ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SIS429DNT-T1-GE3 electronic components. SIS429DNT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIS429DNT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIS429DNT-T1-GE3 Vörueiginleikar
Hlutanúmer :
SIS429DNT-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET P-CH 30V 20A POWERPAK1212
Röð :
-
Hluti staða :
Active
FET gerð :
P-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
20A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
21 mOhm @ 10.5A, 10V
Vgs (th) (Max) @ kt :
3V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
50nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
1350pF @ 15V
FET lögun :
-
Dreifing orku (Max) :
27.8W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PowerPAK® 1212-8
Pakki / mál :
PowerPAK® 1212-8
Nýjustu fréttir
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