Framleiðandi :
GeneSiC Semiconductor
Lýsing :
TRANS SJT 650V 4A TO-257
Tækni :
SiC (Silicon Carbide Junction Transistor)
Afrennsli að uppspennu (Vdss) :
650V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
4A (Tc) (165°C)
Drifspenna (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
415 mOhm @ 4A
Hliðargjald (Qg) (Max) @ Vgs :
-
Inntaksrýmd (Ciss) (Max) @ Vds :
324pF @ 35V
Dreifing orku (Max) :
47W (Tc)
Vinnuhitastig :
-55°C ~ 225°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
TO-257