[13167stk lager]
- Hlutanúmer:
- 2SK3565(Q,M)
- Framleiðandi:
- Toshiba Semiconductor and Storage
- Nákvæm lýsing:
- MOSFET N-CH 900V 5A TO-220SIS.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - Zener - Stakur, Transistors - JFETs, Thyristors - SCRs - mát, Díóða - Zener - Fylki, Transistors - IGBTs - mát, Transistors - FETs, MOSFETs - RF, Díóða - breytileg getu and Transistors - sérstök tilgangur ...
- Samkeppnisforskot:
- We specialize in Toshiba Semiconductor and Storage 2SK3565(Q,M) electronic components. 2SK3565(Q,M) can be shipped within 24 hours after order. If you have any demands for 2SK3565(Q,M), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
2SK3565(Q,M) Vörueiginleikar
Hlutanúmer :
2SK3565(Q,M)
Framleiðandi :
Toshiba Semiconductor and Storage
Lýsing :
MOSFET N-CH 900V 5A TO-220SIS
Röð :
π-MOSIV
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
900V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
5A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.5 Ohm @ 3A, 10V
Vgs (th) (Max) @ kt :
4V @ 1mA
Hliðargjald (Qg) (Max) @ Vgs :
28nC @ 10V
Vgs (hámark) :
±30V
Inntaksrýmd (Ciss) (Max) @ Vds :
1150pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
45W (Tc)
Vinnuhitastig :
150°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
TO-220SIS
Pakki / mál :
TO-220-3 Full Pack
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