[13179stk lager]
- Hlutanúmer:
- SPP02N60C3HKSA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 650V 1.8A TO-220AB.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - RF, Díóða - leiðréttingar - stakir, Díóða - Zener - Fylki, Díóða - Zener - Stakur, Thyristors - TRIACs, Thyristors - SCR and Díóða - Bríta leiðréttingar ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies SPP02N60C3HKSA1 electronic components. SPP02N60C3HKSA1 can be shipped within 24 hours after order. If you have any demands for SPP02N60C3HKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SPP02N60C3HKSA1 Vörueiginleikar
Hlutanúmer :
SPP02N60C3HKSA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 650V 1.8A TO-220AB
Röð :
CoolMOS™
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
650V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
1.8A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3 Ohm @ 1.1A, 10V
Vgs (th) (Max) @ kt :
3.9V @ 80µA
Hliðargjald (Qg) (Max) @ Vgs :
12.5nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
200pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
25W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
PG-TO220-3-1
Pakki / mál :
TO-220-3
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