Vishay Semiconductor Diodes Division - BYG10D-M3/TR

KEY Part #: K6439746

BYG10D-M3/TR Verðlagning (USD) [742232stk lager]

  • 1 pcs$0.05071
  • 12,600 pcs$0.05046

Hlutanúmer:
BYG10D-M3/TR
Framleiðandi:
Vishay Semiconductor Diodes Division
Nákvæm lýsing:
DIODE AVALANCHE 200V 1.5A. Rectifiers 1.5A,200V VGSC-STD Avalanche SMD
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - SCR, Kerfisstjóratæki, Transistors - sérstök tilgangur, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays, Díóða - RF, Thyristors - TRIACs and Transistors - IGBTs - Single ...
Samkeppnisforskot:
We specialize in Vishay Semiconductor Diodes Division BYG10D-M3/TR electronic components. BYG10D-M3/TR can be shipped within 24 hours after order. If you have any demands for BYG10D-M3/TR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYG10D-M3/TR Vörueiginleikar

Hlutanúmer : BYG10D-M3/TR
Framleiðandi : Vishay Semiconductor Diodes Division
Lýsing : DIODE AVALANCHE 200V 1.5A
Röð : Automotive, AEC-Q101
Hluti staða : Active
Díóða gerð : Avalanche
Spenna - DC snúningur (Vr) (Max) : 200V
Núverandi - meðaltal leiðrétt (Io) : 1.5A
Spenna - Fram (Vf) (Max) @ Ef : 1.15V @ 1.5A
Hraði : Standard Recovery >500ns, > 200mA (Io)
Afturheimtur bata (trr) : 4µs
Núverandi - Aftur leki @ Vr : 1µA @ 200V
Capacitance @ Vr, F : -
Festingargerð : Surface Mount
Pakki / mál : DO-214AC, SMA
Birgir tæki pakki : DO-214AC (SMA)
Rekstrarhiti - mótum : -55°C ~ 150°C

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