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ON Semiconductor - FDB16AN08A0

KEY Part #: K6392723

FDB16AN08A0 Verðlagning (USD) [74271stk lager]

  • 1 pcs$0.52910
  • 800 pcs$0.52646
Hlutanúmer:
FDB16AN08A0
Framleiðandi:
ON Semiconductor
Nákvæm lýsing:
MOSFET N-CH 75V 58A TO-263AB.
Venjulegur framleiðslutími framleiðanda:
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Hong Kong
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KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - Bríta leiðréttingar, Thyristors - DIACs, SIDACs, Transistors - sérstök tilgangur, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - RF, Transistors - Tvíhverfur (BJT) - RF and Díóða - Zener - Fylki ...
Samkeppnisforskot:
We specialize in ON Semiconductor FDB16AN08A0 electronic components. FDB16AN08A0 can be shipped within 24 hours after order. If you have any demands for FDB16AN08A0, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDB16AN08A0 Vörueiginleikar

Hlutanúmer : FDB16AN08A0
Framleiðandi : ON Semiconductor
Lýsing : MOSFET N-CH 75V 58A TO-263AB
Röð : PowerTrench®
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 75V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 9A (Ta), 58A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 16 mOhm @ 58A, 10V
Vgs (th) (Max) @ kt : 4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs : 42nC @ 10V
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : 1857pF @ 25V
FET lögun : -
Dreifing orku (Max) : 135W (Tc)
Vinnuhitastig : -55°C ~ 175°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : D²PAK
Pakki / mál : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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