IPB60R099C6ATMA1 Verðlagning (USD) [27417stk lager]
- 1 pcs$1.50321
- Hlutanúmer:
- IPB60R099C6ATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 600V 37.9A TO263.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Smára - tvíhverfa (BJT) - fylki, forspeglast, Thyristors - DIACs, SIDACs, Transistors - Tvíhverfur (BJT) - RF, Transistors - Tvíhverfur (BJT) - Single, Thyristors - SCR, Transistors - Forritanleg sameining, Transistors - FETs, MOSFETs - Single and Transistors - sérstök tilgangur ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IPB60R099C6ATMA1 electronic components. IPB60R099C6ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB60R099C6ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB60R099C6ATMA1 Vörueiginleikar
Hlutanúmer :
IPB60R099C6ATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 600V 37.9A TO263
Röð :
CoolMOS™
Hluti staða :
Not For New Designs
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
600V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
37.9A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
99 mOhm @ 18.1A, 10V
Vgs (th) (Max) @ kt :
3.5V @ 1.21mA
Hliðargjald (Qg) (Max) @ Vgs :
119nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
2660pF @ 100V
FET lögun :
-
Dreifing orku (Max) :
278W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
D²PAK (TO-263AB)
Pakki / mál :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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