IXFP4N100P Verðlagning (USD) [41564stk lager]
- 1 pcs$1.08728
- 50 pcs$1.08188
- Hlutanúmer:
- IXFP4N100P
- Framleiðandi:
- IXYS
- Nákvæm lýsing:
- MOSFET N-CH 1000V 4A TO-220.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - leiðréttingar - fylki, Transistors - IGBTs - mát, Díóða - breytileg getu, Transistors - Forritanleg sameining, Díóða - Zener - Fylki, Smára - tvíhverfa (BJT) - fylki, Smára - tvíhverfa (BJT) - fylki, forspeglast and Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf ...
- Samkeppnisforskot:
- We specialize in IXYS IXFP4N100P electronic components. IXFP4N100P can be shipped within 24 hours after order. If you have any demands for IXFP4N100P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFP4N100P Vörueiginleikar
Hlutanúmer :
IXFP4N100P
Framleiðandi :
IXYS
Lýsing :
MOSFET N-CH 1000V 4A TO-220
Röð :
HiPerFET™, PolarP2™
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
1000V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
4A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3.3 Ohm @ 2A, 10V
Vgs (th) (Max) @ kt :
5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
26nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
1456pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
150W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
TO-220AB
Pakki / mál :
TO-220-3
Nýjustu fréttir
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