[1278stk lager]
- Hlutanúmer:
- IRFH6200TR2PBF
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 20V 100A 5X6 PQFN.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Díóða - leiðréttingar - fylki, Thyristors - SCRs - mát, Kerfisstjóratæki, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Thyristors - TRIACs and Transistors - IGBTs - mát ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IRFH6200TR2PBF electronic components. IRFH6200TR2PBF can be shipped within 24 hours after order. If you have any demands for IRFH6200TR2PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFH6200TR2PBF Vörueiginleikar
Hlutanúmer :
IRFH6200TR2PBF
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 20V 100A 5X6 PQFN
Röð :
HEXFET®
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
49A (Ta), 100A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
2.5V, 10V
Rds On (Max) @ Id, Vgs :
0.95 mOhm @ 50A, 10V
Vgs (th) (Max) @ kt :
1.1V @ 150µA
Hliðargjald (Qg) (Max) @ Vgs :
230nC @ 4.5V
Vgs (hámark) :
±12V
Inntaksrýmd (Ciss) (Max) @ Vds :
10890pF @ 10V
FET lögun :
-
Dreifing orku (Max) :
3.6W (Ta), 156W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
8-PQFN (5x6)
Pakki / mál :
8-PowerVDFN
Nýjustu fréttir
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