IXFX200N10P Verðlagning (USD) [9721stk lager]
- 1 pcs$4.68680
- 30 pcs$4.66349
- Hlutanúmer:
- IXFX200N10P
- Framleiðandi:
- IXYS
- Nákvæm lýsing:
- MOSFET N-CH 100V 200A PLUS247.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - SCR, Transistors - FETs, MOSFETs - Arrays, Díóða - leiðréttingar - fylki, Díóða - leiðréttingar - stakir, Díóða - Zener - Stakur, Díóða - RF, Transistors - JFETs and Transistors - sérstök tilgangur ...
- Samkeppnisforskot:
- We specialize in IXYS IXFX200N10P electronic components. IXFX200N10P can be shipped within 24 hours after order. If you have any demands for IXFX200N10P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFX200N10P Vörueiginleikar
Hlutanúmer :
IXFX200N10P
Framleiðandi :
IXYS
Lýsing :
MOSFET N-CH 100V 200A PLUS247
Röð :
HiPerFET™, PolarP2™
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
200A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
7.5 mOhm @ 100A, 10V
Vgs (th) (Max) @ kt :
5V @ 8mA
Hliðargjald (Qg) (Max) @ Vgs :
235nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
7600pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
830W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
PLUS247™-3
Pakki / mál :
TO-247-3
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