Toshiba Semiconductor and Storage - TK3A60DA(Q,M)

KEY Part #: K6397655

TK3A60DA(Q,M) Verðlagning (USD) [77289stk lager]

  • 1 pcs$0.50590

Hlutanúmer:
TK3A60DA(Q,M)
Framleiðandi:
Toshiba Semiconductor and Storage
Nákvæm lýsing:
MOSFET N-CH 600V 2.5A TO-220SIS.
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Smára - tvíhverfa (BJT) - fylki, Díóða - breytileg getu, Díóða - RF, Transistors - sérstök tilgangur, Thyristors - SCRs - mát, Smára - tvíhverfa (BJT) - fylki, forspeglast, Díóða - leiðréttingar - fylki and Thyristors - SCR ...
Samkeppnisforskot:
We specialize in Toshiba Semiconductor and Storage TK3A60DA(Q,M) electronic components. TK3A60DA(Q,M) can be shipped within 24 hours after order. If you have any demands for TK3A60DA(Q,M), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK3A60DA(Q,M) Vörueiginleikar

Hlutanúmer : TK3A60DA(Q,M)
Framleiðandi : Toshiba Semiconductor and Storage
Lýsing : MOSFET N-CH 600V 2.5A TO-220SIS
Röð : π-MOSVII
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 600V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 2.5A (Ta)
Drifspenna (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2.8 Ohm @ 1.3A, 10V
Vgs (th) (Max) @ kt : 4.4V @ 1mA
Hliðargjald (Qg) (Max) @ Vgs : 9nC @ 10V
Vgs (hámark) : ±30V
Inntaksrýmd (Ciss) (Max) @ Vds : 380pF @ 25V
FET lögun : -
Dreifing orku (Max) : 30W (Tc)
Vinnuhitastig : 150°C (TJ)
Festingargerð : Through Hole
Birgir tæki pakki : TO-220SIS
Pakki / mál : TO-220-3 Full Pack

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