BSP299H6327XUSA1 Verðlagning (USD) [140209stk lager]
- 1 pcs$0.26380
- 1,000 pcs$0.20158
- Hlutanúmer:
- BSP299H6327XUSA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 500V 0.4A SOT-223.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - RF, Díóða - RF, Transistors - sérstök tilgangur, Díóða - Zener - Fylki, Smára - tvíhverfa (BJT) - fylki, forspeglast, Transistors - FETs, MOSFETs - RF, Kerfisstjóratæki and Díóða - leiðréttingar - fylki ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies BSP299H6327XUSA1 electronic components. BSP299H6327XUSA1 can be shipped within 24 hours after order. If you have any demands for BSP299H6327XUSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSP299H6327XUSA1 Vörueiginleikar
Hlutanúmer :
BSP299H6327XUSA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 500V 0.4A SOT-223
Röð :
SIPMOS®
Hluti staða :
Not For New Designs
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
500V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
400mA (Ta)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
4 Ohm @ 400mA, 10V
Vgs (th) (Max) @ kt :
4V @ 1mA
Hliðargjald (Qg) (Max) @ Vgs :
-
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
400pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
1.8W (Ta)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-SOT223-4
Pakki / mál :
TO-261-4, TO-261AA
Nýjustu fréttir
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