Infineon Technologies - BSP299H6327XUSA1

KEY Part #: K6416807

BSP299H6327XUSA1 Verðlagning (USD) [140209stk lager]

  • 1 pcs$0.26380
  • 1,000 pcs$0.20158

Hlutanúmer:
BSP299H6327XUSA1
Framleiðandi:
Infineon Technologies
Nákvæm lýsing:
MOSFET N-CH 500V 0.4A SOT-223.
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSP299H6327XUSA1 Vörueiginleikar

Hlutanúmer : BSP299H6327XUSA1
Framleiðandi : Infineon Technologies
Lýsing : MOSFET N-CH 500V 0.4A SOT-223
Röð : SIPMOS®
Hluti staða : Not For New Designs
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 500V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 400mA (Ta)
Drifspenna (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 400mA, 10V
Vgs (th) (Max) @ kt : 4V @ 1mA
Hliðargjald (Qg) (Max) @ Vgs : -
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : 400pF @ 25V
FET lögun : -
Dreifing orku (Max) : 1.8W (Ta)
Vinnuhitastig : -55°C ~ 150°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : PG-SOT223-4
Pakki / mál : TO-261-4, TO-261AA

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