IXTA1N120P Verðlagning (USD) [32472stk lager]
- 1 pcs$1.40312
- 50 pcs$1.39614
- Hlutanúmer:
- IXTA1N120P
- Framleiðandi:
- IXYS
- Nákvæm lýsing:
- MOSFET N-CH 1200V 1A TO-263.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - Bríta leiðréttingar, Transistors - IGBTs - Single, Transistors - Tvíhverfur (BJT) - Single, Díóða - leiðréttingar - fylki, Díóða - RF, Thyristors - TRIACs, Transistors - IGBTs - mát and Thyristors - SCR ...
- Samkeppnisforskot:
- We specialize in IXYS IXTA1N120P electronic components. IXTA1N120P can be shipped within 24 hours after order. If you have any demands for IXTA1N120P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTA1N120P Vörueiginleikar
Hlutanúmer :
IXTA1N120P
Framleiðandi :
IXYS
Lýsing :
MOSFET N-CH 1200V 1A TO-263
Röð :
PolarVHV™
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
1200V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
1A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
20 Ohm @ 500mA, 10V
Vgs (th) (Max) @ kt :
4.5V @ 50µA
Hliðargjald (Qg) (Max) @ Vgs :
17.6nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
550pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
63W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
TO-263 (IXTA)
Pakki / mál :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Nýjustu fréttir
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