IPB50R299CPATMA1 Verðlagning (USD) [1030stk lager]
- 1,000 pcs$0.47875
- Hlutanúmer:
- IPB50R299CPATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 550V 12A TO-263.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - breytileg getu, Thyristors - TRIACs, Transistors - Tvíhverfur (BJT) - Single, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Díóða - leiðréttingar - fylki, Transistors - FETs, MOSFETs - RF, Díóða - leiðréttingar - stakir and Transistors - JFETs ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IPB50R299CPATMA1 electronic components. IPB50R299CPATMA1 can be shipped within 24 hours after order. If you have any demands for IPB50R299CPATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB50R299CPATMA1 Vörueiginleikar
Hlutanúmer :
IPB50R299CPATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 550V 12A TO-263
Röð :
CoolMOS™
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
550V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
12A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
299 mOhm @ 6.6A, 10V
Vgs (th) (Max) @ kt :
3.5V @ 440µA
Hliðargjald (Qg) (Max) @ Vgs :
31nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
1190pF @ 100V
FET lögun :
-
Dreifing orku (Max) :
104W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-TO263-3-2
Pakki / mál :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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