[2022stk lager]
- Hlutanúmer:
- IPD50R950CEBTMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 500V 4.3A PG-TO252.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - sérstök tilgangur, Transistors - FETs, MOSFETs - Single, Transistors - Tvíhverfur (BJT) - Single, Díóða - leiðréttingar - stakir, Thyristors - TRIACs, Transistors - Tvíhverfur (BJT) - RF, Thyristors - DIACs, SIDACs and Transistors - JFETs ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IPD50R950CEBTMA1 electronic components. IPD50R950CEBTMA1 can be shipped within 24 hours after order. If you have any demands for IPD50R950CEBTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD50R950CEBTMA1 Vörueiginleikar
Hlutanúmer :
IPD50R950CEBTMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 500V 4.3A PG-TO252
Röð :
CoolMOS™
Hluti staða :
Discontinued at Digi-Key
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
500V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
4.3A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
13V
Rds On (Max) @ Id, Vgs :
950 mOhm @ 1.2A, 13V
Vgs (th) (Max) @ kt :
3.5V @ 100µA
Hliðargjald (Qg) (Max) @ Vgs :
10.5nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
231pF @ 100V
FET lögun :
Super Junction
Dreifing orku (Max) :
34W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-TO252-3
Pakki / mál :
TO-252-3, DPak (2 Leads + Tab), SC-63
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