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- Hlutanúmer:
- IXCY01N90E
- Framleiðandi:
- IXYS
- Nákvæm lýsing:
- MOSFET N-CH 900V 0.25A TO-252.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - Arrays, Smára - tvíhverfa (BJT) - fylki, forspeglast, Díóða - Zener - Fylki, Díóða - Zener - Stakur, Transistors - JFETs, Transistors - Tvíhverfur (BJT) - RF, Thyristors - SCR and Transistors - IGBTs - Single ...
- Samkeppnisforskot:
- We specialize in IXYS IXCY01N90E electronic components. IXCY01N90E can be shipped within 24 hours after order. If you have any demands for IXCY01N90E, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXCY01N90E Vörueiginleikar
Hlutanúmer :
IXCY01N90E
Framleiðandi :
IXYS
Lýsing :
MOSFET N-CH 900V 0.25A TO-252
Röð :
-
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
900V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
250mA (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
80 Ohm @ 50mA, 10V
Vgs (th) (Max) @ kt :
5V @ 25µA
Hliðargjald (Qg) (Max) @ Vgs :
7.5nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
133pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
40W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
TO-252
Pakki / mál :
TO-252-3, DPak (2 Leads + Tab), SC-63
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